1·The bent bond states mainly appear near the top of valence band.
弯键态主要出现在价带顶附近。
2·When an electron leaps into the conduction band, it leaves behind a hole in the valence band.
当一个电子跃迁到传导带，它会在价带留下一个“凹陷”。
3·The experimental result, show an increase of both conduction and valence band tail states.
实验结果表明：光照以后，导带尾态和价带尾态都增加了。
4·Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.
价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；
5·This paper gives a simplified calculation of the valence band structure for a diamond-type crystal in nearest neighbor approximation.
用最近邻近似法对金刚石型晶体的价带给出了一种简化的计算法。
6·The results show: 1. There emerges a new bound state in the gap caused by thee-e interation, that is a shallow discrete level near the top of the valence band.
结果发现：1。电子相互作用使能隙中出现了一个新的电子束缚态，它是靠近价带的浅能级；
7·There are four surface state bands in the gap. Among them, two occupied surface state bands have been confirmed by valence band spectra of synchrotron radiation photoelectron spectroscopy.
在带隙附近存在四个表面态带，其中的两个占有表面态带已由价带的同步辐射光电子能谱实验得到证实。
8·The valence-band offsets of such systems are calculated by frozen potential method and their Joint density of states has been computed by tetrahedron method.
在此基础上，用冻结势方法计算了该超晶格系统的价带带阶；用四面体方法计算了该系统的联合态密度。
9·The quantitative results about shift of Fermi surface, widening of energy band width and varying of atomic valence of each crystal site are given.
给出了高压下费米面移动、能带展宽和各晶位原子价变化的定量结果。